Accession Number : ADA284898


Title :   Low Temperature Grown and Highly Non-Stoichiometric GaAs and Related Materials


Descriptive Note : Final rept. 1 Apr 1993-30 Mar 1994


Corporate Author : MATERIALS RESEARCH SOCIETY PITTSBURGH PA


Personal Author(s) : Look, David C ; Melloch, Michael R


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a284898.pdf


Report Date : 03 Aug 1994


Pagination or Media Count : 152


Abstract : Forty-one papers were presented in five sessions, as follows: Growth Issues, including growth of As and P-based compounds, annealing effects, and characterization by scanning tunneling microscopy (STM) real-time ellipsometry, and positron annihilation; Processing and Characterization, including point- defect and precipitate formations and their characterization by electrical, optical magnetic resonance, and STM techniques; Optical and Optoelectronic Properties, including the materials GaAs, InGaAs, and InGaP, and their responses to light stimulation, explained by various models; InP and Related Ternary Materials, including the Materials InP, InGaAs, InAlAs, and ordered InGaAs/ InAlAs layers, characterized by optically detected magnetic resonance, electrical measurements, tunneling electron microscopy, and photoreflectance; Applications of Nonstoichiometric Materials, including power MESFET design, phase noise measurements, coherent microwave generation, excitonic electro-optic observations, and GaAs on Si device applications.


Descriptors :   *OPTICAL PROPERTIES , *LOW TEMPERATURE , *GALLIUM ARSENIDES , *STOICHIOMETRY , *EPITAXIAL GROWTH , *PERIODICALS , SCANNING , ELECTRONICS , SEMICONDUCTORS , MICROSCOPY , ELLIPSOMETERS , ANNIHILATION REACTIONS , POSITRONS , PRECIPITATES , PHOSPHORUS , TERNARY COMPOUNDS , INDIUM PHOSPHIDES , TUNNELING , ALUMINUM ARSENIDES , POINT DEFECTS , FIELD EFFECT TRANSISTORS , COMPOSITE MATERIALS , SYMPOSIA , ANNEALING , METALS


Subject Categories : Electrical and Electronic Equipment
      Laminates and Composite Materials
      Crystallography
      Optics


Distribution Statement : APPROVED FOR PUBLIC RELEASE