Accession Number : ADA275235


Title :   Modeling the Total Dose Radiation Effects of Hg(1-x)Cd(x)Te Photodiodes Using Numerical Device Simulators


Descriptive Note : Technical rept. 1 Oct 92-28 Feb 93,


Corporate Author : RENSSELAER POLYTECHNIC INST TROY NY


Personal Author(s) : Petrosky, James C ; Howard, James W ; Block, Robert C ; Bhat, Iswara


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a275235.pdf


Report Date : 01 Jan 1994


Pagination or Media Count : 59


Abstract : We fabricated high quality MCT diodes using in-situ grown MCT and selective annealing. We used these diodes to benchmark our initial characterization and as a basis for our irradiation modeling. We implemented the models in PISCES-IIB and compared the I-V relationship to measurements. The close match between simulations and measurements demonstrates the applicability of the models. We expanded the simulations to I-V characteristics of irradiated diodes. To do so, we developed models for the induced current mechanisms resulting from radiation interactions. The results confirm the theories concerning the radiation's effect on tunneling in MCT. The simulations also suggest that improvements require knowledge of tunneling currents associated with trap formation in MCT. Radiation effects, MCT, Mercury cadmium telluride, Infrared detectors, Device simulations, Photodiodes.


Descriptors :   *SIMULATION , *MODELS , *MERCURY CADMIUM TELLURIDES , *PHOTODIODES , *RADIATION EFFECTS , DIODES , INTERACTIONS , QUALITY , INFRARED DETECTORS , TRAPS , CURRENTS , TUNNELING , IRRADIATION , CADMIUM TELLURIDES , NUMERICAL ANALYSIS , MEASUREMENT , ANNEALING


Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Radioactiv, Radioactive Wastes & Fission Prod
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE