Accession Number : ADA271290


Title :   Nanofabrication by Focused Ion Beam


Descriptive Note : Final rept. 1 May 92-31 Aug 93,


Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS


Personal Author(s) : Melngailis, John ; Antoniadis, Dimitri A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a271290.pdf


Report Date : 28 Sep 1993


Pagination or Media Count : 17


Abstract : Nanometer scale patterning is one of the keys to advances in electronic devices. At present most patterning is done by a multistep lithography process: resist is exposed and developed and the uncovered surface is altered. The focused ion beam may offer simplification of this multistep process. A surface film may be made to grow or dissolve where it has been irradiated. This can be viewed as a new (inorganic) resist process, but in some cases the patterned film may be the desired final structure on the substrate. The problem is that, although examples of such ion sensitive films have been found, they suffer from some drawback such as low sensitivity, or poor resolution. One of the aims of the work was to seek new and useful processes and materials. Another direct pattering technique, more ideally suited for ion beams, is direct maskless implantation of dopants in semiconductors. One of the limits of resolution of this technique is the lateral straggle of ions as they penetrate into the substrate. This has important bearing on the ability to fabricate the confined carrier structures in semiconductors needed in the study of quantum effect devices. The other object of the work was to characterize this straggle and to apply focused ion beam implantation to the fabrication of confined carrier structures, in particular the in-plane-gate field effect transistor. The final report provides a summary of the most important results. Nanofabrication, Focused ion beams, Ion sensitive films, Semiconductors, Quantum effect devices.


Descriptors :   *ION BEAMS , *LITHOGRAPHY , *PATTERNS , ELECTRONICS , MATERIALS , COMPOSITE MATERIALS , RESOLUTION , STRUCTURES , SENSITIVITY , IMPLANTATION , TRANSISTORS , SIMPLIFICATION , IRRADIATION , BEARINGS , DOPING , SCALE , SURFACES , SEMICONDUCTORS , FILMS , FABRICATION , SUBSTRATES , FIELD EFFECT TRANSISTORS


Subject Categories : Electrical and Electronic Equipment
      Coatings, Colorants and Finishes
      Laminates and Composite Materials
      Particle Accelerators


Distribution Statement : APPROVED FOR PUBLIC RELEASE