Accession Number : ADA268687


Title :   Field Emitter Array RF Amplifier Development Project. Phase 1, Option 1


Descriptive Note : Quarterly technical rept. no. 7, 16 Apr-15 Jul 93,


Corporate Author : MICROELECTRONICS CENTER OF NORTH CAROLINA RESEARCH TRIANGLE PARK


Personal Author(s) : McGuire, Gary E


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a268687.pdf


Report Date : 15 Jul 1993


Pagination or Media Count : 43


Abstract : Key ideas include development of field emitter arrays with a cutoff frequency above 1 Ghz, total current greater than 5 mA sq. cm current density with the gate electrode potential less than 250V and to demonstrate these characteristics for greater than 1 hour lifetime. We reduce capacitance and increase transconductance of field emitter arrays to improve frequency response. We focus on development of tall emitter columns to minimize capacitance and evaluate low work function materials and metals as emitter surface coatings, reduce gate dimensions, and improve tip sharpening to increase transconductance. Test methods are examined to permit characterization of more devices per test cycle.


Descriptors :   *METAL COATINGS , *EMITTERS , *RADIOFREQUENCY AMPLIFIERS , *SOLDERING , FABRICATION , VOLTAGE , CAPACITANCE , SILICON , BONDING , OXIDATION , CURRENT DENSITY


Subject Categories : Electrical and Electronic Equipment
      Coatings, Colorants and Finishes
      Mfg & Industrial Eng & Control of Product Sys


Distribution Statement : APPROVED FOR PUBLIC RELEASE