Accession Number : ADA268529


Title :   Edge-State Tunneling Through Ultrashort Gates


Corporate Author : ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE ELECTRONICS RESEARCH


Personal Author(s) : Ryan, J M ; Deutscher, N F ; Ferry, D K


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a268529.pdf


Report Date : 15 Jun 1993


Pagination or Media Count : 5


Abstract : The gating of edge states by ultrashort gates (50 nm) placed on normal quantum Hall effect devices is studied. In longer-gate devices, plateaus in the longitudinal resistance are found when an integer number of edge states is reflected from the gate. The expected quantized values of longitudinal resistance do not appear in the ultrashort gate devices, indicating that tunneling of the edge states through the depletion barrier continuously occurs for biases less than that needed to completely deplete the region near the gate.


Descriptors :   *GATES(CIRCUITS) , *TUNNELING , DEPLETION , REPRINTS , VOLTAGE , BARRIERS , PLATEAUS , NUMBERS , QUANTUM ELECTRONICS , REGIONS , RESISTANCE , HALL EFFECT


Subject Categories : Electrical and Electronic Equipment
      Electricity and Magnetism
      Quantum Theory and Relativity


Distribution Statement : APPROVED FOR PUBLIC RELEASE