Accession Number : ADA268388


Title :   Laser Probing of the Kinetics and Dynamics of III-V Semiconductor Growth


Descriptive Note : Final rept. Feb 90-30 Jun 93,


Corporate Author : COLORADO UNIV AT BOULDER


Personal Author(s) : Leone, Stephen R


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a268388.pdf


Report Date : 30 Jun 1993


Pagination or Media Count : 15


Abstract : Work is carried out on the dynamics of Ga, In, and As scattering, sticking, and desorption from silicon single crystals using laser induced fluorescence and laser ionization probing of the Ga and In atoms and As atoms, dimers, and tetramers in the gas phase. Desorption kinetics are used to probe the InAs and GaAs heterostructures structures on silicon and the islanding behavior that occurs for the mixed systems. It is observed that islands form readily when In and Ga are grown on a prelayer of As on Si(100. State-resolved detection of As2 species is demonstrated by laser-induced fluorescence probing for the first time. Laser single photon ionization detection of III-V semiconductor species is also demonstrated with high sensitivity and species specific detection. These results are relevant to the epitaxial growth of GaAs and InAs on silicon....Semiconductor, GaAs, InAs, Surface, Laser.


Descriptors :   *PROBES , *DYNAMICS , *GALLIUM ARSENIDES , *SEMICONDUCTORS , *LASERS , *ARSENIDES , *INDIUM , *KINETICS , *SILICON , *EPITAXIAL GROWTH , *SINGLE CRYSTALS , SCATTERING , GASES , DESORPTION , MOLECULAR STRUCTURE , GROUP V COMPOUNDS , GROUP IV COMPOUNDS , GROUP III COMPOUNDS , PHOTONS , IONIZATION , SURFACES , TIME , HIGH SENSITIVITY , DIMERS , ISLANDS , PHASE , ATOMS , STRUCTURES , LAYERS , SENSITIVITY , DETECTION , LASER INDUCED FLUORESCENCE


Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Lasers and Masers
      Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE