Accession Number : ADA268369


Title :   Calculated Room-Temperature Threshold Current Densities for the Visible II-VI ZnCdSe/ZnSe Quantum-Well Diode Lasers


Descriptive Note : Journal article,


Corporate Author : MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB


Personal Author(s) : Aggarwal, R L ; Zayhowski, J J ; Lax, B


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a268369.pdf


Report Date : 07 Jun 1993


Pagination or Media Count : 5


Abstract : Room-temperature threshold current densities for the visible II-VI znCdSe/ZnSe semiconductor quantum-well diode lasers have been calculated using a simple model for the quantum-well gain and spontaneous radiative recombination rate. These results are compared with those for the infrared III-V GaAs/GaAlAs quantum-well lasers, calculated using the same model. By tailoring the epitaxial structure for optimum optical confinement, cw room-temperature operation of the ZnCdSe/ZnSe quantum-well lasers should be possible with threshold current densities as low as 400 A/sq cm for a 1-mm cavity length and uncoated laser facets, assuming the problem of ohmic contacts to the epitaxial structure is resolved.


Descriptors :   *DIODES , *QUANTUM WELLS , *LASERS , *CURRENT DENSITY , *ROOM TEMPERATURE , *CADMIUM SELENIDES , *ZINC SELENIDES , REPRINTS , OPTICS , STRUCTURES , ALUMINUM , GROUP II COMPOUNDS , INFRARED SPECTRA , CONFINEMENT(GENERAL) , GROUP V COMPOUNDS , GROUP IV COMPOUNDS , GROUP III COMPOUNDS , OPERATION , GAIN , LENGTH , GROUP VI COMPOUNDS , CAVITIES , SEMICONDUCTORS , EPITAXIAL GROWTH , RATES , GALLIUM ARSENIDES , MODELS , THRESHOLD EFFECTS


Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Lasers and Masers
      Electricity and Magnetism


Distribution Statement : APPROVED FOR PUBLIC RELEASE