Accession Number : ADA268317


Title :   RF Vacuum Microelectronics


Descriptive Note : Quarterly technical rept. 1 Apr-30 Jun 93,


Corporate Author : HONEYWELL SENSOR AND SYSTEM DEVELOPMENT CENTER BLOOMINGTON MN


Personal Author(s) : Akinwande, A I ; Arch, D K


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a268317.pdf


Report Date : 06 Aug 1993


Pagination or Media Count : 33


Abstract : We summarize our technical progress towards developing a thin-film- edge emitter vacuum transistor capable of 1 GHz modulation. Design of the thin- film-edge emitter microwave vacuum transistors was completed this quarter. The first fabrication run of these devices is presently in progress. In addition, the design, assembly and characterization of two prototypes of high frequency probes that will allow on-wafer testing of the vacuum transistors was completed.


Descriptors :   *HIGH FREQUENCY , *VACUUM , *TRIODES , *MICROELECTRONICS , PROBES , FABRICATION , WAFERS , MODULATION , TRANSISTORS , EMITTERS , ASSEMBLY , MICROWAVES , PROTOTYPES , EDGES , THIN FILMS


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE