Accession Number : ADA268192


Title :   In-Situ Electron and Optical Spectroscopies of Translational and Vibrational Activated Bond Breaking and Formation on Semiconductors


Descriptive Note : Annual rept. 1 Jun 1992-31 May 1993


Corporate Author : CORNELL UNIV ITHACA NY LAB OF ATOMIC AND SOLID STATE PHYSICS


Personal Author(s) : Ho, Wilson


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a268192.pdf


Report Date : 26 Jul 1993


Pagination or Media Count : 7


Abstract : This experimental research program seeks a basic understanding of the growth and processing of materials on semiconductor surfaces. Interactions of molecules with surfaces are investigated by varying the translational and vibrational energies of the impinging molecules from a molecular beam and probing the resulting species on the surface by in-situ time resolved electron energy loss spectroscopy, second harmonic generation, and two-photon photoemission. The reactions of H2, CO, C02, CH(x)F(4-x)(x=0-4), and CH3Cl on Si(100)2xl were studied in order to understand the chemistry of group IV elements: C, Si, and Ge. These studies will be extended to Ge2H6 and Si(111)7x7. The nature of bond breaking and formation of Ge and C on Si to form Ge/Si, SiC, and diamond will be investigated.


Descriptors :   *SEMICONDUCTORS , *MOLECULAR BEAMS , SPECTROSCOPY , SECOND HARMONIC GENERATION , PROCESSING , SURFACES , ELECTRON ENERGY , PHOTONS , GERMANIUM , SILICON CARBIDES , GROUP IV COMPOUNDS , PHOTOELECTRIC EMISSION , CHEMISTRY , GROWTH(GENERAL) , HARMONICS , DIAMONDS , CARBIDES


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE