Accession Number : ADA267989


Title :   Diamond Growth on Carbide Surfaces Using a Selective Etching Technique


Descriptive Note : Technical rept.,


Corporate Author : NORTHWESTERN UNIV EVANSTON IL DEPT OF MATERIALS SCIENCE AND ENGINEERING


Personal Author(s) : Grannen, K J ; Chang, R P


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a267989.pdf


Report Date : Jul 1993


Pagination or Media Count : 30


Abstract : Microwave plasma-enhanced chemical vapor deposition of diamond films on silicon carbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pre-treatment is necessary to grow these films with a (100) texture. The diamond films are characterized by scanning electron microscopy and Raman spectroscopy. The proposed nucleation and growth mechanism involves concurrent etching of the non- carbon component by atomic fluorine and deposition of diamond. Hydrogen is necessary in the growth process to limit the rapid etching of the substrate by fluorine atoms.


Descriptors :   *DIAMONDS , *CARBIDES , *CRYSTAL GROWTH , SCANNING , SPECTROSCOPY , CHEMICALS , MICROWAVES , ION BEAMS , CARBON , HYDROGEN , TUNGSTEN CARBIDES , COBALT , SILICON CARBIDES , FLUORINE , DEPOSITION , SURFACES , ELECTRON MICROSCOPY , ETCHING , NUCLEATION , SUBSTRATES , VAPOR DEPOSITION , GRAPHITE , PLASMAS(PHYSICS) , RAMAN SPECTROSCOPY


Subject Categories : Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE