Accession Number : ADA267875


Title :   Structural Characterization of Epitaxial Layers for Infrared Detectors


Descriptive Note : Annual technical rept. 1 Jun 92-31 May 93,


Corporate Author : CARNEGIE-MELLON UNIV PITTSBURGH PA


Personal Author(s) : Greve, D W


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a267875.pdf


Report Date : 22 Jun 1993


Pagination or Media Count : 9


Abstract : Initial structural characterization of germanium-silicon epitaxial layers for heterojunction internal photoemission and multiple quantum well infrared detectors has been performed. Cross sectional TEM of multiple quantum wells has been used to confirm period and well thickness measurements performed by other techniques. No defects were observed by TEM in these layers. A variety of other layers including multiple quantum wells on relaxed buffers and heterojunction internal photoemission detector structures have been characterized by defect etching and X-ray diffraction.... Epitaxial, Germanium, Silicon, Infrared.


Descriptors :   *LAYERS , *QUANTUM WELLS , *HETEROJUNCTIONS , *SILICON , *EPITAXIAL GROWTH , *INFRARED DETECTORS , *GERMANIUM , BUFFERS , MEASUREMENT , ETCHING , ELECTRON MICROSCOPY , PHOTOELECTRIC EMISSION , DEFECT ANALYSIS , INTERNAL , DIFFRACTION , X RAYS , X RAY DIFFRACTION , STRUCTURES , THICKNESS , CRYSTAL STRUCTURE , DETECTORS


Subject Categories : Inorganic Chemistry
      Crystallography
      Optics


Distribution Statement : APPROVED FOR PUBLIC RELEASE