Accession Number : ADA267865


Title :   Low Voltage Electron Beam Lithography


Corporate Author : STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a267865.pdf


Report Date : May 1993


Pagination or Media Count : 6


Abstract : The contract has three parts covering aspects of high precision electron beam lithography. (1) Comprehensive computer modeling of the electron beam tool. (2) Experimental determination of the properties of sources, columns, and targets, and (3) The use of silicon single crystals as straightness and orthogonality standards using orientation dependent etching techniques


Descriptors :   *ETCHING , *LITHOGRAPHY , *ELECTRON BEAMS , COMPUTERIZED SIMULATION , SINGLE CRYSTALS , FIELD EMISSION , WAFERS


Subject Categories : Electrical and Electronic Equipment
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE