Accession Number : ADA267382


Title :   Surface Flashover of Semiconductors: A Fundamental Study


Descriptive Note : Final rept. 15 Jan 89-14 Jan 93,


Corporate Author : NEBRASKA UNIV LINCOLN DEPT OF ELECTRICAL ENGINEERING


Personal Author(s) : Williams, P F ; Nunnally, W C


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a267382.pdf


Report Date : 16 Jun 1993


Pagination or Media Count : 38


Abstract : This report presents research results and activities carried out during the period January 15, 1989 through January 14, 1993 sponsored by AFOSR Grant No. AFOSR-89-0253. Work was carried out at the University of Nebraska (UNL), and at the University of Texas at Arlington (UTA). The work at each of these locations is discussed in detail in separate sections of this report. Important conclusions are: (1) The phenomenon commonly referred to as surface flashover in silicon results from a sequence of events occurring primarily inside the silicon, rather than in the ambient surrounding it; (2) Current filamentation plays an important role in the breakdown process; (3) Contacts to the silicon influence the breakdown process; (4) The condition of the sample surface strongly influences breakdown; (5) Flashover can be inhibited through the action of weak visible or near infra-red illumination; (6) Current before the initiation of flashover is strongly space-charge limited; (7) Double injection effects are clearly present in p+-i-n+ structures, and will limit the applicability of such structures as photoconductive switches. Surface flashover semiconductor, Photoconductive switch


Descriptors :   *ELECTRIC FIELDS , *SEMICONDUCTORS , *SURFACES , *SILICON , INJECTION , ANNEALING , CONTRACTS , GOLD , BREAKDOWN(ELECTRONIC THRESHOLD) , PHOTOCONDUCTIVITY , SWITCHES , SPACE CHARGE , ELECTRIC CURRENT , ALUMINUM , ILLUMINATION , ELECTROOPTICS , STRUCTURES , VOLTAGE


Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Electrooptical and Optoelectronic Devices
      Electricity and Magnetism


Distribution Statement : APPROVED FOR PUBLIC RELEASE