Accession Number : ADA267305


Title :   Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy


Descriptive Note : Annual rept. May 92-30 Apr 93,


Corporate Author : BOSTON UNIV MA DEPT OF ELECTRICAL COMPUTER AND SYSTEMS ENGINEERING


Personal Author(s) : Moustakas, Theodore D


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a267305.pdf


Report Date : 30 May 1993


Pagination or Media Count : 104


Abstract : During this funding period, the work focused on the heteroepitaxial growth, doping, and characterization of GaN by the ECR-MBE method. Nitrogen-ECR plasmas were investigated by Optical Emission Spectroscopy. Work was also initiated in the growth of AlN. In the area of GaN growth on (0001) sapphire, we identified ECR-plasma conditions to grow the material in the layer-by-layer growth mode to a layer-by-layer growth followed by an island growth mode. Such films were grown in semi-insulating form (p equal or approx. 10(exp 12) omega(dot)cm) and doped p- and n-type with Mg and Si at the level of 10(exp 19) cm(-3). RIE of GaN using CCl2F2 and CF3Br/Ar as well as Ohmic contacts to n-GaN were developed. Defects in the films were characterized by photoluminescence and EPR studies. Initial studies of AlN growth indicate that the material can grow in the single crystal form at temperatures comparable to that of GaN.... Gallium Nitride, Aluminum Nitride, N-doping, P-doping, Molecular Beam Epitaxy, Electron Cyclotron Resonance source) Ohmic photoluminescence, Conduction electron spin.


Descriptors :   *PLASMAS(PHYSICS) , *EPITAXIAL GROWTH , *CRYSTAL GROWTH , TEMPERATURE , LAYERS , X RAY DIFFRACTION , CRYSTALS , MOLECULAR BEAMS , SAPPHIRE , SURFACE PROPERTIES , ATOMIC STRUCTURE , CYCLOTRON RESONANCE , ELECTRON MOBILITY , DOPING , EMISSION SPECTROSCOPY , GALLIUM , SILICON , ELECTRONS , NITRIDES , NUCLEATION , SINGLE CRYSTALS , FILMS , PHOTOLUMINESCENCE , MATERIALS


Subject Categories : Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE