Accession Number : ADA267198


Title :   Ion Doped Quantum Well Lasers


Descriptive Note : Final rept. 15 Aug 92-14 Feb 93,


Corporate Author : SPIRE CORP BEDFORD MA


Personal Author(s) : Greenwald, Anton C


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a267198.pdf


Report Date : Apr 1993


Pagination or Media Count : 23


Abstract : Synthesis of erbium-doped light-emitting structures will make it possible to fabricate electrically excited ionic lasers whose output frequency is independent of temperature. The emission wavelength is determined by the ionic properties of the dopant rather than by the band structure of the semiconductor. Optical pumping efficiency would be high, as would the electrical pumping efficiency of the semiconductor. Spire's approach to fabrication of the required structure is metalorganic chemical vapor deposition (MOCVD). in this research project, Spire synthesized and tested different metalorganic chemical sources for erbium. An amide compound, trimethyldisilylamino erbium, was found superior to the cyclopentadienyls as it reduced carbon contamination in the final film, without adding nitrogen or silicon contaminants.


Descriptors :   *IONS , *QUANTUM WELLS , *LASERS , *DOPING , FREQUENCY , OUTPUT , SYNTHESIS , STRUCTURES , FILMS , FABRICATION , SEMICONDUCTORS , ERBIUM COMPOUNDS , OPTICAL PUMPING , CONTAMINATION , AMIDES , ELECTRIC POWER , SILICON , NITROGEN , CARBON , VAPOR DEPOSITION , EFFICIENCY , LIGHT , EXCITATION , CHEMICALS , TEMPERATURE , EMISSION


Subject Categories : Physical Chemistry
      Lasers and Masers
      Electricity and Magnetism
      Quantum Theory and Relativity


Distribution Statement : APPROVED FOR PUBLIC RELEASE