Accession Number : ADA267150


Title :   Laser Assisted CVD Growth of A1N and GaN


Descriptive Note : Final rept. Aug 89-Feb 93,


Corporate Author : HOWARD UNIV WASHINGTON DC DEPT OF CHEMISTRY


Personal Author(s) : Halpern, Joshua B ; Frye, Joan M


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a267150.pdf


Report Date : 20 Jun 1993


Pagination or Media Count : 40


Abstract : This is the final report of a project for investigating laser (assisted) methods of growing nitrile thin films. We have grown thin films of AlN and SiN by laser ablation from powders. We have also developed an efficient method for laser assisted CVD of aluminum, or aluminum containing films from trimethylalaminum.


Descriptors :   *THIN FILMS , *PULSED LASERS , *CRYSTAL GROWTH , ABLATION , NITRIDES , SEMICONDUCTING FILMS , SILICON NITRIDES , NITRILES , ALUMINUM , LASERS , VAPOR DEPOSITION


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE