Accession Number : ADA266948


Title :   Annual Grant Progress Report (FDP) for Contract N00014-92-J-1757 (University of California)


Descriptive Note : Annual progress rept. 1 Aug 92-1 Jul 93,


Corporate Author : CALIFORNIA UNIV BERKELEY DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE


Personal Author(s) : Hu, Chenming


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a266948.pdf


Report Date : 01 Jul 1993


Pagination or Media Count : 55


Abstract : This aims of this research grant has not been modified. The aims are to extend the reliability models for oxide wear out and hot-electron-induced degradation from DC stress to AC stress by arbitrary waveforms as encountered in circuits, to develop a circuit reliability simulator that incorporates the best known reliability models for oxide and hot electrons effects and to develop improved device and reliable oxides. We have set a new world record in silicon transistor --13.5ps at room temperature and at 1.5 volt. This resulted from our research into the design and fabrication of advanced silicon-on-insulator MOS transistors. The goal is to understand the reliability limits of transistor scaling.


Descriptors :   *EPITAXIAL GROWTH , *INTEGRATED CIRCUITS , *METAL OXIDE SEMICONDUCTORS , *TRANSISTORS , STRESSES , COMPUTERIZED SIMULATION , IONS , SPATIAL DISTRIBUTION , THICKNESS , DEGRADATION , SUBSTRATES , NITROUS OXIDE , DIRECT CURRENT , DESIGN CRITERIA , RELIABILITY , ETCHING , FIELD EFFECT TRANSISTORS , ALTERNATING CURRENT , TECHNOLOGY TRANSFER , SILICON DIOXIDE , INSULATION , PLASMAS(PHYSICS) , THIN FILMS , VERY LARGE SCALE INTEGRATION , FABRICATION


Subject Categories : Electrical and Electronic Equipment
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE