Accession Number : ADA266714


Title :   Low Threshold Voltage Continuous Wave Vertical-Cavity Surface-Emitting Lasers


Corporate Author : TEXAS UNIV AT AUSTIN MICROELECTRONICS RESEARCH CENTER


Personal Author(s) : Rogers, T J ; Lei, C ; Deppe, D G ; Streetman, B G


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a266714.pdf


Report Date : 26 Apr 1993


Pagination or Media Count : 4


Abstract : Data are presented demonstrating a design and fabrication process for the realization of low-threshold, high-output vertical-cavity surface-emitting laser diodes with low series resistance. Lateral current confinement is achieved in the laser structures through the use of molecular-beam epitaxial regrowth over a 1000-A-thick patterned layer of low growth temperature AlGaAs incorporated into the p-type top mirror. A maximum cw output power in excess of 5.7 mW, at 300 K is demonstrated for 15-micrometer-diam devices. With increased top mirror reflectivity (through the addition of dielectric layers), the low series resistance of the design results in a bias voltage on o 1.8 V at a threshold current of 1.9 mA for 10-micrometer-diam devices.... Vertical-cavity surface-emitting lasers.


Descriptors :   *SEMICONDUCTOR LASERS , *SEMICONDUCTOR DIODES , DIODES , MIRRORS , OUTPUT , REPRINTS , TEMPERATURE , RESISTANCE , LASERS , BIAS , EMITTERS , REFLECTIVITY , POWER , SURFACES , MOLECULAR BEAMS , CAVITIES , EPITAXIAL GROWTH , ALUMINUM GALLIUM ARSENIDES , CONTINUOUS WAVES , DIELECTRICS , FABRICATION , VOLTAGE


Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers


Distribution Statement : APPROVED FOR PUBLIC RELEASE