Accession Number : ADA266570


Title :   Ultrafast Processes in Tunneling Microstructure Devices


Descriptive Note : Final rept. 15 Sep 1989-14 Dec 1992


Corporate Author : CITY COLL NEW YORK


Personal Author(s) : Alfano, R R ; Shum, Kai


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a266570.pdf


Report Date : 21 Jun 1993


Pagination or Media Count : 5


Abstract : A systematic investigation of ultrafast electron tunneling processes in semiconductor microstructures in presence of inter-valley (X-gamma) scattering, infrared radiation, phonons, and Coulomb interaction has been undertaken. Various important time constants involved in high speed electronic and photonic device operation were obtained such as the lifetime of a quasi- bound state, the time needed for in electron to tunnel into a well through a barrier, and the escape time for an electron to tunnel out from a well through a barrier. Our investigation under the period supported by the grant has resulted in ten journal publications.


Descriptors :   *TUNNELING(ELECTRONICS) , *SEMICONDUCTORS , VELOCITY , ELECTRONICS , SCATTERING , PHOTONICS , ELECTRONS , PHONONS , GREENS FUNCTIONS , INFRARED RADIATION , BARRIERS , TIME , MICROSTRUCTURE , INTERACTIONS , HIGH VELOCITY , QUANTUM WELLS


Subject Categories : Electrical and Electronic Equipment
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE