Accession Number : ADA266457


Title :   Single Crystal Diamond Thin Films


Descriptive Note : Technical progress rept. no. 1, 28 Jul 1992-27 Apr 1993


Corporate Author : EPION CORP BEDFORD MA


Personal Author(s) : Kirkpatrick, Allen


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a266457.pdf


Report Date : May 1993


Pagination or Media Count : 13


Abstract : One possibility for accomplishing growth of single crystal diamond film on a nondiamond substrate is based upon ion implantation of carbon atoms into crystalline copper. In spite of widespread interest in the concept, heteroepitaxial diamond growth by this approach has never been confirmed. The objective of this program is to develop specialized ion implantation capabilities for C+ into Cu processing under conditions for which heteroepitaxial formation of diamond on copper may be feasible. A 200 keV medium current ion implantation system has been modified to allow implantations to be performed into substrates at temperatures up to 1000 deg C, to incorporate background atomic hydrogen in the vicinity of the substrate surface during implantation, and to facilitate in-situ CVD diamond growth processing. Apparatus development has been completed and process investigations have been initiated.


Descriptors :   *THIN FILMS , *DIAMONDS , *VAPOR DEPOSITION , *CHEMICAL REACTIONS , *SINGLE CRYSTALS , TEMPERATURE , CRYSTALS , NUCLEATION , ION IMPLANTATION , SURFACES , CURRENTS , COPPER , HYDROGEN , CARBON , ATOMS , SUBSTRATES , EPITAXIAL GROWTH , PROCESSING , COMPOSITE MATERIALS


Subject Categories : Physical Chemistry
      Laminates and Composite Materials
      Crystallography
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE