Accession Number : ADA266301


Title :   Quarterly Progress Report 93-1 on Contract N00014-93-1-0705 (Arizona State Univ., Tempe)


Corporate Author : ARIZONA STATE UNIV TEMPE DEPT OF ELECTRICAL AND COMPUTER ENGINEERING


Personal Author(s) : Ferry, David K ; Kozicki, Michael N ; Allee, David R


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a266301.pdf


Report Date : 01 Jul 1993


Pagination or Media Count : 3


Abstract : Silicon-Dioxide as a resist: we have rebuilt the carbon-enhanced vapor etching facility to provide better control over etch rates and uniformity. This has substantially improved the system. We have exposed SiO2 in the electron-beam lithography facility in a process that provides carbon contamination of the sample. It is found that an exposure dose of 100 micron C/ cm2 (roughly one-half that needed for PMMA) provides sufficient carbon to provide a 23:1 differential in the etch rate of the SiO2. We are proceeding now to ascertain the resolution limits that can be obtained (previous work by one of the investigators, D. Allee, showed that direct e-beam damage of SiO2 could achieve 8 nm resolution).


Descriptors :   *SILICON DIOXIDE , *INERT MATERIALS , *ARSENIC SULFIDES , SCANNING , VAPORS , POLYMETHYL METHACRYLATE , ETCHING , LITHOGRAPHY , OXIDATION , TUNNELING , STEARIC ACID , HYDROFLUORIC ACID , METALLIZING , SILICON NITRIDES , AUGER ELECTRON SPECTROSCOPY , TRANSFER , PATTERNS , ELECTRON BEAMS , MICROSCOPY , CARBON , THIN FILMS , OPTICS


Subject Categories : Inorganic Chemistry
      Polymer Chemistry
      Coatings, Colorants and Finishes
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE