Accession Number : ADA266300


Title :   Chemical Processes in Silicon and Insulator Growth


Descriptive Note : Final rept. 1 Jan-31 Dec 1987


Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY


Personal Author(s) : Rubloff, G W ; Scott, B A ; Meyerson, B S ; Yu, M L


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a266300.pdf


Report Date : 31 Dec 1987


Pagination or Media Count : 5


Abstract : Below are summarized the significant findings of research carried out under the contract. High temperature annealing of SiO2/Si structures in oxygen- deficient ambients initiates interfacial decomposition of oxide, leading to electrical activation of existing inactive defects. Addition of trace oxygen to the annealing ambient prevents formation of electrical defects; Metal impurities initiate the SiO2/Si interfacial decomposition reaction; Positron annihilation depth profiling is sensitive to defect structures in thermal oxides, possibly associated with intrinsic defect generation which occurs during the thermal oxidation process; and An advanced ultrahigh-vacuum-based multichamber processing and analysis system for CVD and oxidation studies has been designed, fabricated, and demonstrated.


Descriptors :   *SILICON DIOXIDE , *GROWTH(GENERAL) , *INSULATION , *CHEMICAL ENGINEERING , THERMAL PROPERTIES , METALS , THIN FILMS , IMPURITIES , MOLECULAR BEAMS , OXYGEN , ULTRAHIGH VACUUM , TUNGSTEN , DECOMPOSITION , DIFFUSION , MOLECULAR STRUCTURE , ELECTRIC POWER , CHEMICAL REACTIONS , FLUORINE , OXIDATION , DEFECT ANALYSIS , SURFACES , VACUUM CHAMBERS , VAPOR DEPOSITION , HIGH TEMPERATURE , PROCESSING , ANNEALING , INTERFACES


Subject Categories : Industrial Chemistry and Chemical Processing
      Inorganic Chemistry
      Electricity and Magnetism
      Thermodynamics


Distribution Statement : APPROVED FOR PUBLIC RELEASE