Accession Number : ADA266260


Title :   Atomic Layer Epitaxy of Boron Nitride


Descriptive Note : Final rept. 1 Jun-31 Dec 1992


Corporate Author : APA OPTICS INC BLAINE MN


Personal Author(s) : Khan, M A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a266260.pdf


Report Date : 03 Jun 1993


Pagination or Media Count : 16


Abstract : This document summarizes the work performed under the Phase I project aimed at developing the wide bandgap nitrides for high temperature electronics and optoelectronics applications. The focus was on the study of atomic layer epitaxy of BN, AlN and GaN. We present a summary of the program accomplishments. This is followed by a description of the technical effort including the data obtained. Finally we outline a potential Phase II program.


Descriptors :   *BORON NITRIDES , ELECTRONICS , OPTICS , TEMPERATURE , LAYERS , HIGH TEMPERATURE , HETEROJUNCTIONS , FILMS , EPITAXIAL GROWTH , NITRIDES , PHASE , DEPOSITION , ALUMINUM , GALLIUM , SEMICONDUCTOR JUNCTIONS , KINETICS , SPUTTERING , TUNGSTEN


Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Electrooptical and Optoelectronic Devices
      Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE