Accession Number : ADA266205


Title :   Kinetics of Semiconductor Surface Chemistry: Silicon Atomic Layer Processing


Descriptive Note : End-of-the-year rept.


Corporate Author : COLORADO UNIV AT BOULDER DEPT OF CHEMISTRY AND BIOCHEMISTRY


Personal Author(s) : George, Steven M


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a266205.pdf


Report Date : May 1993


Pagination or Media Count : 19


Abstract : Surface Kinetics play a crucial role in semiconductor processing chemistry. Our research concentrates on fundamental understanding of microscopic surface kinetics that dictate surface chemistry. We are exploring the various adsorption, decomposition, diffusion and desorption steps in reactions on single-crystal silicon surfaces. These basic time-dependent surface processes are examined using laser induced thermal desorption (LITD) and Fourier transform infrared (FTIR) techniques. These techniques provide direct, quantitative measurements of surface coverage in real-time. Atomic layer processing is a vital need for semiconductor fabrication. As the size of electronic devices approaches the nanometer scale, the need to control growth on an atomic scale is extremely important. For the construction of next generation devices, controlled atomic layer-by-layer processing during oxidation, growth, etching and metallization is critical.


Descriptors :   *SEMICONDUCTORS , *SILICON , *KINETICS , *SURFACE CHEMISTRY , THERMAL PROPERTIES , LAYERS , ADSORPTION , DESORPTION , ATOMIC PROPERTIES , METALLIZING , DECOMPOSITION , DIFFUSION , ETCHING , OXIDATION , LASERS , PROCESSING , SINGLE CRYSTALS


Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Atomic and Molecular Physics and Spectroscopy


Distribution Statement : APPROVED FOR PUBLIC RELEASE