Accession Number : ADA266205
Title : Kinetics of Semiconductor Surface Chemistry: Silicon Atomic Layer Processing
Descriptive Note : End-of-the-year rept.
Corporate Author : COLORADO UNIV AT BOULDER DEPT OF CHEMISTRY AND BIOCHEMISTRY
Personal Author(s) : George, Steven M
Report Date : May 1993
Pagination or Media Count : 19
Abstract : Surface Kinetics play a crucial role in semiconductor processing chemistry. Our research concentrates on fundamental understanding of microscopic surface kinetics that dictate surface chemistry. We are exploring the various adsorption, decomposition, diffusion and desorption steps in reactions on single-crystal silicon surfaces. These basic time-dependent surface processes are examined using laser induced thermal desorption (LITD) and Fourier transform infrared (FTIR) techniques. These techniques provide direct, quantitative measurements of surface coverage in real-time. Atomic layer processing is a vital need for semiconductor fabrication. As the size of electronic devices approaches the nanometer scale, the need to control growth on an atomic scale is extremely important. For the construction of next generation devices, controlled atomic layer-by-layer processing during oxidation, growth, etching and metallization is critical.
Descriptors : *SEMICONDUCTORS , *SILICON , *KINETICS , *SURFACE CHEMISTRY , THERMAL PROPERTIES , LAYERS , ADSORPTION , DESORPTION , ATOMIC PROPERTIES , METALLIZING , DECOMPOSITION , DIFFUSION , ETCHING , OXIDATION , LASERS , PROCESSING , SINGLE CRYSTALS
Subject Categories : Physical Chemistry
Electrical and Electronic Equipment
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE