Accession Number : ADA266124


Title :   The Adsorption and Surface Reaction of SiC14 on Si(100)-(2X1)


Descriptive Note : Technical rept. no. 57


Corporate Author : PITTSBURGH UNIV PA SURFACE SCIENCE CENTER


Personal Author(s) : Geo, Q ; Dohnalek, Z ; Cheng, C C ; Choyke, W J ; Yates, Jr, J T


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a266124.pdf


Report Date : 26 May 1993


Pagination or Media Count : 30


Abstract : The adsorption and surface reaction of SiCl4 on Si(100)-(2x1) have been investigated in the temperature range of 100K-1000K. Adsorption of monolayer SiCl4 and multilayer SiCl4 are observed by temperature programmed desorption (TPD), high resolution electron energy loss spectroscopy (HREELS), and electron stimulated desorption ion angular distribution (ESDIAD). Upon heating to approx. 200K and above, Si-Cl bond scission in adsorbed SiCl4 occurs, depositing SiCl(x) species. Heating to 673K leaves the surface with only silicon monochloride species, SiCl(a), exhibiting Si-Cl stretching mode, vSiCl, at approx. 560 cm/cm, and a Cl(+) ESDIAD pattern indicative of inclined Si-Cl bond directions from Cl adsorbed on Si2 dimer sites. Silicon substrate etching occurs above 800K producing SiCl2(g) as the desorption product.


Descriptors :   *SILICON , *SURFACE REACTIONS , *CHLORINE , TEMPERATURE , SPECTROSCOPY , LAYERS , ADSORPTION , THIN FILMS , LOSSES , DESORPTION , HEATING , CHEMICAL REACTIONS , HIGH RESOLUTION , ETCHING , CHEMICAL BONDS , ELECTRON ENERGY


Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Atomic and Molecular Physics and Spectroscopy
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE