Accession Number : ADA266036


Title :   Polymers for Microelectronics


Descriptive Note : Technical rept. Mar 1992-Jun 1993


Corporate Author : OREGON UNIV EUGENE


Personal Author(s) : Cai, S X ; Wybourne, M N ; Keana, J F


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a266036.pdf


Report Date : 10 Jun 1993


Pagination or Media Count : 11


Abstract : A comparative study of polystyrene (PS) with bis(perfluorophenyl) azides 1-2 and the corresponding non-fluorinated bisazides 3-4 as deep-UV resists is reported. Inclusion of as low as 1.2 wt-% of 1 in PS led to 70% retention of film thickness after photolysis and development. PS containing 2.4 wt-% of 1 is 100 times more sensitive as a deep-UV negative resist than PS itself. The presence of 1 in PS also increased the contrast of the resist. On a molar basis, 1 was about 10 times as effective as non-fluorinated bisazide 3 in cross-linking PS while 2 was about 6 times as effective as 4. PS containing 2.4 wt-% of 1 was found to have a deep-UV sensitivity of 5-10 mJ/sq cm and resolution of about 0.5 micrometer. Polymers, Deep-UV negative resists, Cross-linking.


Descriptors :   *POLYSTYRENE , *MICROELECTRONICS , *AZIDES , THICKNESS , PHOTOLYSIS , FILMS , SENSITIVITY , CROSSLINKING(CHEMISTRY) , INCLUSIONS , INTEGRATED CIRCUITS , RESOLUTION , POLYMERS


Subject Categories : Polymer Chemistry
      Electrical and Electronic Equipment
      Optics


Distribution Statement : APPROVED FOR PUBLIC RELEASE