Accession Number : ADA265456


Title :   Photoluminescent Thin-Films Porous Silicon on Sapphire


Descriptive Note : Technical rept.,


Corporate Author : CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF CHEMISTRY


Personal Author(s) : Dubbelday, W B ; Szaflarski, Diane M ; Shimabukuro, R L ; Russell, S D ; Sailor, Michael J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a265456.pdf


Report Date : 01 Jun 1993


Pagination or Media Count : 7


Abstract : Results from the chemical stain etch fabrication and analysis of thin-film photoluminescent porous silicon on sapphire substrates are presented. The transparent sapphire substrate allows the excitation and collection of the luminescence at either the front or back of the wafer. Morphological differences found using scanning electron microscopy between porous SOS and porous bulk silicon are attributed to preferential etching of threading dislocations. This is confirmed by an observed stress relaxation in the raman spectra. Also, it is shown for the first time that photoluminescent porous silicon (n-type) can be produced by photoinitiation of the chemical stain etch


Descriptors :   *THIN FILMS , *SAPPHIRE , *SILICON , SCANNING , ELECTRONICS , REPRINTS , FABRICATION , ETCHING , WAFERS , STRESS RELAXATION , POROUS MATERIALS , RAMAN SPECTRA , CHEMICAL REACTIONS , DISLOCATIONS , ELECTRON MICROSCOPY , INTEGRATED CIRCUITS , ELECTROOPTICS , EXCITATION , PHOTOLUMINESCENCE


Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Optics
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE