Accession Number : ADA265409


Title :   Progress Toward Atomic Layer Epitaxy of Diamond Using Radical Chemistry


Descriptive Note : Technical rept. no. 18,


Corporate Author : RICE UNIV HOUSTON TX DEPT OF CHEMISTRY


Personal Author(s) : Gat, R ; Hukka, T I ; D'Evelyn, M P


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a265409.pdf


Report Date : 29 May 1993


Pagination or Media Count : 8


Abstract : A novel method for atomic layer epitaxy (ALE) of diamond using radical reactants under medium vacuum conditions is being developed. Precursor molecules are injected into a stream of thermally-dissociated fluorine atoms, generating radicals in a chemically specific way. We have grown diamond particles at rates of approximately 0.1 micrometers/hr on polycrystalline copper and nickel wire substrates seeded by diamond particles from continuous flows of F/F2, H2, and C2H3 or Ch4 at substrate temperatures of 500-600 deg C and reactor pressures between 10(exp-3) and 10(exp-1) Torr. Identification of diamond with submicron lateral resolution was made using electron microprobe x-ray fluroescence wavelength dispersive spectroscopy


Descriptors :   *DIAMONDS , *EPITAXIAL GROWTH , HYDROGEN , FLUORINE , ULTRAHIGH VACUUM


Subject Categories : Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE