Accession Number : ADA265358


Title :   Low Voltage Electron Beam Lithography


Descriptive Note : Monthly rept.


Corporate Author : STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS


Personal Author(s) : Browning, R ; Pease, R F


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a265358.pdf


Report Date : Feb 1993


Pagination or Media Count : 10


Abstract : The contract has three parts covering aspects of high precision electron beam lithography. (1) Comprehensive computer modeling of the electron beam tool. (2) Experimental determination of the properties of sources, columns, and targets, and (3) The use of silicon single crystals as straightness and orthogonality standards using orientation dependent etching techniques


Descriptors :   *ETCHING , *LITHOGRAPHY , *ELECTRON BEAMS , COMPUTER PROGRAMS , COMPUTERS , SILICON , ORTHOGONALITY , LOW VOLTAGE , PRECISION , SCATTERING CROSS SECTIONS , SINGLE CRYSTALS , CRYSTALS , TARGETS


Subject Categories : Printing and Graphic Arts


Distribution Statement : APPROVED FOR PUBLIC RELEASE