Accession Number : ADA265197
Title : Applications of In-Situ Ellipsometry to Microwave Electron Cyclotron Resonance Plasma Processes
Descriptive Note : Technical rept.
Corporate Author : NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY
Personal Author(s) : Hu, Y Z ; Joseph, J ; Irene, E A
Report Date : 04 May 1993
Pagination or Media Count : 15
Abstract : In-situ static spectroscopic ellipsometry used during a process is a powerful method for characterizing the optical properties and structure of multilayered thin films. However, the commonly practice rotating element ellipsometry takes about 10 min for each spectral measurement. Using only a single wavelength gives less information, but each measurement time reduces to about 5 sec. It is shown that a combination of the techniques was adequate to investigate the plasma processes. Spectroscopic ellipsometry, SE, measurements for Si, Ge, InP, InSb and GaAs showed that for properly selected photon energy ranges, the dependence of the dielectric functions on temperatures minimum while the sensitivity to surface modifications is high. The ECR plasma oxidation of Si is discussed first, since it is the simplest case, and then attention is given to more complex example of ECR plasma ion bombardment induced oxidation and damage in single crystal Ge.
Descriptors : *CYCLOTRON RESONANCE , FUNCTIONS , MEASUREMENT , OPTICAL PROPERTIES , TEMPERATURE , POLARIZATION , DAMAGE , SPECTROSCOPY , MODIFICATION , PLASMAS(PHYSICS) , GALLIUM ARSENIDES , ENERGY , STRUCTURES , THIN FILMS , DIELECTRICS , LIGHT , SINGLE CRYSTALS , SENSITIVITY , ION BOMBARDMENT , SURFACES , OXIDATION , SILICON , PHOTONS , INDIUM PHOSPHIDES , STATICS , GERMANIUM , ROTATION , INDIUM ANTIMONIDES
Subject Categories : Physical Chemistry
Plasma Physics and Magnetohydrodynamics
Distribution Statement : APPROVED FOR PUBLIC RELEASE