Accession Number : ADA265151


Title :   Si/SiO2 Interfere Studies by Immersion Ellipsometry


Descriptive Note : Technical rept.


Corporate Author : NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY


Personal Author(s) : Liu, Q ; Irene, E A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a265151.pdf


Report Date : 04 May 1993


Pagination or Media Count : 8


Abstract : The mechanisms associated with Si/SiO2 interface annealing and Thermal oxidation conditions were studied by spectroscopic immersion ellipsometry. Essentially, this surface sensitive ellipsometry technique uses liquids that refractive index match with the films, thereby optically removing the films. With the use of an optical model, it is shown that at annealing temperatures viscous relaxation dominates, while at low annealing temperatures the suboxide reduction is apparent. It is also shown that with the thickening SiO2 Overlayer, the thickness of the suboxide layer at the interface increases and the average radius of the crystalline silicon protrusions decreases for the three different orientation studied. These results are consistent with the commonly accepted Si oxidation model.... Spectroscopic immersion ellipsometry.


Descriptors :   *ANNEALING , *INTERFACES , THICKNESS , REFRACTIVE INDEX , SEMICONDUCTORS , SURFACES , SILICON , IMMERSION , ELLIPSOMETERS , OXIDATION , REDUCTION , FILMS , SILICON DIOXIDE , MODELS


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE