Accession Number : ADA265148
Title : Applications of Spectroscopic Ellipsometry to Microelectronics
Descriptive Note : Technical rept.
Corporate Author : NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY
Personal Author(s) : Irene, E A
Report Date : 04 May 1993
Pagination or Media Count : 43
Abstract : Ellipsometry has been applied to problems in the microelectronics industry from the beginning in the 1960's. More recently spectroscopic ellipsometry has been introduced. In-situ during process ellipsometry offers great promise for monitoring and control of a wide variety of microelectronics processes. This review covers some applications in silicon technology such as oxidation, chemical vapor deposition, etching, interfaces, and new processing techniques such as plasma, ion beam and rapid thermal, in an effort to demonstrate the kinds of crucial microelectronics information and processes that modern ellipsometry can access. The conclusion is that single wavelength ellipsometry along is not sufficient; spectroscopic ellipsometry is required to establish the optimum ellipsometry measurement conditions. The future of ellipsometry in microelectronics is assessed.
Descriptors : *THIN FILMS , *SILICON , *MICROELECTRONICS , *ELLIPSOMETERS , IONS , MEASUREMENT , THICKNESS , MONITORING , VAPOR DEPOSITION , ETCHING , LITHOGRAPHY , OXIDATION , DEPOSITION , ION BEAMS , SPECTROSCOPY , INTERFACES , PROCESSING , PLASMAS(PHYSICS)
Subject Categories : Electrical and Electronic Equipment
Test Facilities, Equipment and Methods
Distribution Statement : APPROVED FOR PUBLIC RELEASE