Accession Number : ADA265037


Title :   An Ellipsometry Investigation of Nucleation and Growth of Electron Cyclotron Resonance Plasma Deposited Silicon Films


Descriptive Note : Technical rept.


Corporate Author : NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY


Personal Author(s) : Li, M ; Hu, Y Z ; Wall, J ; Conrad, K ; Irene, E A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a265037.pdf


Report Date : 04 May 1993


Pagination or Media Count : 18


Abstract : The nucleation and initial growth of Si films is fundamental to the understanding and control of rapid thermal CVD, RTCVD, and plasma enhanced CVD, PECVD processes. Herein we report on the nucleation and growth of Si deposited on oxidized silicon wafers by ECR PECVD in 600-700 deg C temperature range, under low-pressures, and using both in situ spectroscopic ellipsometry (SE) and single wavelength realtime ellipsometry. An island growth and coalescence model is used to interpret the real-time ellipsometry data. initial nuclei distance and growth-parameters are derived. Atomic Force Microscopy (AFM) was used to observe the early stage of nucleation. In situ spectroscopic ellipsometry is used to measure the final Si film thicknesses and optical properties. The structure of the deposited crystalline Si films were characterized by XTEM.


Descriptors :   *SILICON , *ELLIPSOMETERS , *CRYSTAL GROWTH , OPTICAL PROPERTIES , TEMPERATURE , MODELS , REAL TIME , SPECTROSCOPY , PLASMAS(PHYSICS) , STRUCTURES , PRESSURE , PHOTOELECTRONS , SILICON NITRIDES , CYCLOTRON RESONANCE , NUCLEI , WAFERS , FILMS , EPITAXIAL GROWTH , VAPOR DEPOSITION , INTEGRATED CIRCUITS , NUCLEATION , MICROSCOPY , COALESCENCE


Subject Categories : Electrical and Electronic Equipment
      Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE