Accession Number : ADA264888


Title :   DLTS and Dynamic Transconductance Analysis of Deep-Submicron Fully- Depleted SOI MOSFETs


Descriptive Note : Quarterly rept. 1 Jan-31 Mar 1993


Corporate Author : GEORGE MASON UNIV FAIRFAX VA


Personal Author(s) : Ioannou, Dimitris E


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264888.pdf


Report Date : 31 Mar 1993


Pagination or Media Count : 19


Abstract : An experimental study of the degradation mechanisms of hot-carrier stressed SOI (SIMOX) MOSFET's is carried out. Depending on the applied stress conditions, it is found that device degradation is mainly caused by electron and hole trapping by intrinsic and generated oxide traps and/or by generation of interface states. Sequential hot-electron stressing of the front/back channels results in successive electron/hole injection in the gate oxides, leading to important insights on the nature of the degradation mechanisms.


Descriptors :   *MECHANICS , *ELECTRONS , *TRANSISTORS , DEGRADATION , INTERFACES , OXIDES , PHYSICAL PROPERTIES , HOLES(ELECTRON DEFICIENCIES) , TRAPPING(CHARGED PARTICLES)


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE