Accession Number : ADA264778


Title :   Effects of Hydrogen-Only Interrupts on InGaAs/InP Superlattices Grown by OMVPE


Descriptive Note : Professional paper,


Corporate Author : NAVAL COMMAND CONTROL AND OCEAN SURVEILLANCE CENTER RDT AND E DIV SAN DIEGO CA


Personal Author(s) : Clawson, A R ; Vu, T T ; Pappert, S A ; Hanson, C M


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264778.pdf


Report Date : Jan 1992


Pagination or Media Count : 7


Abstract : Superlattices of InGaAs/InP have been grown by OMVPE using short interval H2-only growth interrupts to eliminate intermixing of hydride gases at the heterojunction interfaces. Changes in lattice strain resulting from interlayer alloying were measured by X-ray diffraction. The changes in strain are small and consistent with decomposition of the surfaces when exposed to the nonequilibrium H2 vapor. Possible interface smoothing is seen with H2 interrupt at the InGaAs to InP transition. A large compressive strain contribution is unaffected by the interrupts and is to As carryover into the InP from surrounding solid deposits rather than the transport gases. Semiconductor technology, Indium phosphide, Electro-optics/electronics, mm-wave, Heterojunction transistors, Monolithic


Descriptors :   *GALLIUM ARSENIDES , *SUPERLATTICES , *SEMICONDUCTORS , *INDIUM PHOSPHIDES , *HYDROGEN , ELECTRONICS , REPRINTS , OPTICS , HYDRIDES , ELECTROOPTICS , MILLIMETER WAVES , PHOSPHIDES , TRANSPORT , DIFFRACTION , DEPOSITS , SURFACES , GASES , X RAYS , ALLOYS , SOLIDS , INTERVALS , COMPRESSIVE PROPERTIES , TRANSISTORS , DECOMPOSITION , TRANSITIONS , STRAIN(MECHANICS) , X RAY DIFFRACTION , HETEROJUNCTIONS , INTERFACES , LAYERS , VAPORS , CRYSTAL LATTICES


Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Electrical and Electronic Equipment
      Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE