Accession Number : ADA264755


Title :   Atomic Layer Epitaxy of Semiconductor Heterostructures


Descriptive Note : Final rept. 15 Sep 1991-14 Sep 1992


Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF ELECTRICAL ENGINEERING


Personal Author(s) : Bedair, Salah


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264755.pdf


Report Date : Nov 1992


Pagination or Media Count : 43


Abstract : AlGaP and GaP films were deposited on the (100) Si substrates by Atomic Layer Epitaxy (ALE) in the temperature range between 450 and 600 deg C. Under optimum growth conditions, the growth of GaP and AlGaP was observed to proceed in a two-dimensional (2-D) fashion in the initial growth stages. These ALE-grown films have better surface morphology when compared with the corresponding MOCVD-grown films. With an AlGaP buffer layer grown on Si, the subsequent growth of GaAs on the AlGaP-coated Si substrates tends to proceed 2-D growth. This avoids island growth and the two-step growth process currently used.


Descriptors :   *LAYERS , *EPITAXIAL GROWTH , *SEMICONDUCTORS , *ATOMIC STRUCTURE , BUFFERS , TWO DIMENSIONAL , MORPHOLOGY , SURFACES , ALUMINUM , CHEMICAL REACTIONS , GALLIUM PHOSPHIDES , PHOSPHIDES , SILICON , COATINGS , SUBSTRATES , VAPOR DEPOSITION , FILMS , GALLIUM ARSENIDES , TEMPERATURE


Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Coatings, Colorants and Finishes
      Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE