Accession Number : ADA264707


Title :   Infrared Imaging Array Integrated in Three Dimensions Directly on Top of Silicon Circuits


Descriptive Note : Final rept.


Corporate Author : GEORGIA INST OF TECH ATLANTA SCHOOL OF ELECTRICAL ENGINEERING


Personal Author(s) : Brooke, M ; Jokerst, N ; Allen, M ; DeWeerth, S


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264707.pdf


Report Date : May 1993


Pagination or Media Count : 24


Abstract : We have demonstrated the first three dimensional integration of a high quality compound semiconductor infrared imaging detector array directly on top of a foundry-produced silicon neuromorphic image processing circuit. There is great potential for this new technology in neuromorphic image processing applications. This new ability to construct complex locally connected neuromorphic focal-plane processors with direct massively parallel connections to high quality compound semiconductor imaging arrays will lead to new levels of sophistication in focal-plane processing. During this research, thin film p-i-n and metal-semiconductor-metal (MSM) detectors were fabricated and tested. A four-by-four array of detectors was integrated onto a metallized silicon substrate and directly on top of an array of silicon circuits. The yield of each of these arrays was 100%, i.e., every detector was functional, and, in the integration onto silicon circuitry, every circuit underneath the detectors was also functional.


Descriptors :   *IMAGE PROCESSING , *INFRARED IMAGES , *FOCAL PLANES , METALS , THIN FILMS , ARRAYS , SUBSTRATES , INFRARED DETECTORS , CIRCUITS , SILICON , SEMICONDUCTORS , THREE DIMENSIONAL , QUALITY , INTEGRATION


Subject Categories : Infrared Detection and Detectors


Distribution Statement : APPROVED FOR PUBLIC RELEASE