Accession Number : ADA264655


Title :   Surface Chemistry of Hydrogen-Passivated Porous Silicon-Oxidation of Surface Si-H Groups by Acetone


Descriptive Note : Technical rept.


Corporate Author : PITTSBURGH UNIV PA SURFACE SCIENCE CENTER


Personal Author(s) : Rao, Ling-Fen ; Yates, Jr, John T


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264655.pdf


Report Date : 12 Apr 1993


Pagination or Media Count : 21


Abstract : The oxidation of hydrogen-passivated porous silicon by acetone at room temperature has been observed by using transmission infrared spectroscopy. After reaction with liquid acetone, two infrared absorption modes at 2253 cm- 1 and 2200 cm-1 develop, and this is accompanied by loss of absorbance of the Si-H stretch modes at 2142 cm-1, 2110 cm-1 and 2089 cm-1. We postulate that oxidation of the surface silicon hydride species by acetone to form (CH3)2HCO-Si-Hx and (CH3)2HCO2Si-Hx species has occurred. This surface reaction may be utilized for passivation of the silicon surface. Silicon, Acetone, Porous silicon, Oxidation, Passivation.


Descriptors :   *SILICON , *SURFACE CHEMISTRY , *POROUS MATERIALS , MICROSTRUCTURE , HYDRIDES , INFRARED SPECTROSCOPY , SPECTROSCOPY , CHEMICAL PROPERTIES , LIQUIDS , CHEMICAL REACTIONS , ACETONES , ABSORPTION , SURFACE REACTIONS , PHOTOLUMINESCENCE , ELECTROCHEMISTRY , ETCHING , ROOM TEMPERATURE , HYDROGEN , OXIDATION


Subject Categories : Inorganic Chemistry
      Physical Chemistry


Distribution Statement : APPROVED FOR PUBLIC RELEASE