Accession Number : ADA264417


Title :   Fundamental Studies of the Morphology, Chemistry, and Electrical Properties of Metals on GaAs and other III-V Semiconductor Compounds


Descriptive Note : Final rept. 1 Oct 1988-30 Sep 1991


Corporate Author : STANFORD UNIV CA STANFORD ELECTRONICS LABS


Personal Author(s) : Spicer, W E ; Lindau, I


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264417.pdf


Report Date : 30 Sep 1992


Pagination or Media Count : 19


Abstract : A large effort has been placed to understand and develop passivation for the III-V surfaces. Although the major objective of these studies, to develop practical passivation for III-V devices other than heterojunctions (e.g. A1GaAs), is still unresolved (due to chemical instability of coatings in atmosphere) large progress in the understanding of many basic phenomena has been made. Our studies concentrated on two avenues. Firstly we explored the use S based solutions (Na2S, (NH4)2S etc ) which markedly reduce surface recombination at the GaAs(100) surface. Secondly we studied the Sb interlayers on both GaAs and InP surfaces as an intermediate reaction barriers for passivating layer


Descriptors :   *METALS , *GALLIUM ARSENIDES , *GROUP III COMPOUNDS , *GROUP IV COMPOUNDS , *SEMICONDUCTORS , *GROUP V COMPOUNDS , THERMAL PROPERTIES , MORPHOLOGY , AMMONIA , CHEMISTRY , CHEMICAL REACTIONS , ELECTRIC CONTACTS , INSTABILITY , ARSENIC , ANTIMONY , DESORPTION , SCHOTTKY BARRIER DEVICES , INDIUM PHOSPHIDES , SULFUR , MOLECULAR STRUCTURE , BARRIERS , COATINGS , SURFACES , ELECTRICAL PROPERTIES , SODIUM , LAYERS , ELECTRONICS


Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Properties of Metals and Alloys
      Electricity and Magnetism


Distribution Statement : APPROVED FOR PUBLIC RELEASE