Accession Number : ADA264381


Title :   R and D Status Report: RF Vacuum Microelectronics Quarterly Progress Report. No. 5


Descriptive Note : Quarterly progress rept. 1 Oct-31 Mar 93,


Corporate Author : HONEYWELL SENSOR AND SYSTEM DEVELOPMENT CENTER BLOOMINGTON MN


Personal Author(s) : Arch, David K


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264381.pdf


Report Date : 06 Apr 1993


Pagination or Media Count : 12


Abstract : We summarize our sixth quarter progress towards developing a thin- film-edge, emitter vacuum transistor capable of 1 GHz modulation for sustained (l hour) periods of time. We completed extensive DC characterization of completed devices. We also performed low frequency modulation tests of the vacuum transistors at 10-100 KHz. We designed a vacuum feedthrough with high frequency probes for testing vacuum transistors at 2-4 GHz (BNC connectors) and 10- 12 GHz (SMA connectors). A program review was held at the conclusion of the baseline phase. We also replanned the option phase of the program with a goal of obtaining vacuum transistors that have 1 GHz modulation with gain.... Vacuum microelectronics, Edge emitter, Triode, High frequency devices.


Descriptors :   *HIGH FREQUENCY , *MICROELECTRONICS , *TRANSISTORS , TEST AND EVALUATION , EDGES , THIN FILMS , FILMS , MODULATION , TRIODES , LOW FREQUENCY , EMITTERS , CONNECTORS , GAIN , VACUUM , FREQUENCY MODULATION , FREQUENCY


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE