Accession Number : ADA264334


Title :   Fundamental Studies of the Mechanical Behavior of Microelectronics Thin Film Materials


Descriptive Note : Final rept. 15 Nov 88-31 Dec 92,


Corporate Author : STANFORD UNIV CA DEPT OF MATERIALS SCIENCE AND ENGINEERING


Personal Author(s) : Nix, William D


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264334.pdf


Report Date : Apr 1993


Pagination or Media Count : 38


Abstract : This document represents a final technical report for AFOSR Grant No. 89-0185. The research program supported under this grant involved a fundamental study of the mechanical properties of microelectronic thin film materials. The focus of the work was on the microscopic processes that lead to stresses in microelectronic thin films and control the mechanical properties of these materials. Our work ranged form studies of interconnect metals, passivation glasses and heteroepitaxial thin film semiconductors. In previous reports we highlighted work done of the mechanical properties of passivation glasses and interconnect metals and the processes of failure of interconnect metals. In this final report we highlighted our work on misfit dislocation formation in heteropitaxial thin films. The body of the report contains two reports of our work on misfit dislocations. Our overall understanding of misfit dislocations in Si-Ge layers is described in the first report. That report also describes our work on the effect of capping layers on the formation of misfit dislocations. The second report describes our in situ studies of the kinetics of formation of misfit dislocations in Si-Ge films. By measuring the change of substrates curvature as a function of time during annealing we were able to determine the way in which mobile threading dislocation density changes during the course of annealing.


Descriptors :   *THIN FILMS , *MICROELECTRONICS , STRESSES , CONTROL , FUNCTIONS , METALS , FILMS , EPITAXIAL GROWTH , SEMICONDUCTORS , CURVATURE , CAPPING , EYEGLASSES , GERMANIUM , KINETICS , HETEROGENEITY , MOBILE , SILICON , DISLOCATIONS , GLASS , SUBSTRATES , FAILURE , DENSITY , ANNEALING , MECHANICAL PROPERTIES , LAYERS


Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Coatings, Colorants and Finishes
      Metallurgy and Metallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE