Accession Number : ADA264296


Title :   Numerical Studies of Low Temperature Gallium Arsenide Buffer Layers and Their Influence on Device Operation


Descriptive Note : Annual rept. 15 Jan 92-15 Jan 93,


Corporate Author : SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT


Personal Author(s) : Grubin, H L ; Kreskovsky, J P


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264296.pdf


Report Date : 14 Apr 1993


Pagination or Media Count : 18


Abstract : The focus of the program is the development and application of an algorithm for studying charge transport in low temperature gallium arsenide (LT GaAs) buffer layers and the influence of such layers on device operation. During this reporting period the drift and diffusion equations were modified to include the contributions of clusters in one and two dimensions. In addition, the effects of high resistance material on the operation of FETs was begun. Specifically numerical simulations of clusters in LT GaAs were performed in which the electrical characteristics of the clusters were modeled as local trap sites. Simulations were performed for a single cluster in one dimension, two clusters in one dimension, and an array of clusters in two dimensions. The one- dimensional simulations of a single cluster demonstrate the depletion of mobile charge around the cluster and barrier-like electrostatic behavior. Double cluster simulations, also in one dimension, show the effect of overlapping depletion regions. Two-dimensional simulations of arrays of clusters show how the interaction between the clusters results in an insulating material. Finally, a macroscopic model of the LT material is utilized in the simulation of an FET with an LT layer under the gate. The results suggest that such structures should have enhanced breakdown characteristics without adversely affecting performance. Interaction with Wright Laboratories and Lincoln Laboratories on organization of an APS-focused session on LTR materials and future directions is also summarized.... LT Material, Clusters, GaAs.


Descriptors :   *BUFFERS , *LOW TEMPERATURE , *LAYERS , *MATERIALS , *GALLIUM ARSENIDES , ALGORITHMS , SIMULATION , COMPOSITE MATERIALS , SITES , MOBILE , DRIFT , ELECTRONS , FIELD EFFECT TRANSISTORS , HOLES(ELECTRON DEFICIENCIES) , CURRENT DENSITY , ARRAYS , NUMERICAL ANALYSIS , STRUCTURES , TRAPS , ELECTROSTATICS , EQUATIONS , DIFFUSION , LABORATORIES , OPERATION , TRANSPORT , BARRIERS , ONE DIMENSIONAL , RESISTANCE , TWO DIMENSIONAL , INTERACTIONS , MODELS , DEPLETION , TEMPERATURE


Subject Categories : Electrical and Electronic Equipment
      Laminates and Composite Materials
      Electricity and Magnetism
      Atomic and Molecular Physics and Spectroscopy


Distribution Statement : APPROVED FOR PUBLIC RELEASE