Accession Number : ADA264266


Title :   Laser-Assisted Chemical Vapor Deposition of InN on Si(100)


Descriptive Note : Technical rept. no. 17,


Corporate Author : EMORY UNIV ATLANTA GA DEPT OF CHEMISTRY


Personal Author(s) : Bu, Y ; Lin, M C


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264266.pdf


Report Date : Jan 1993


Pagination or Media Count : 26


Abstract : Laser-assisted chemical vapor deposition of InN on Si(100) using HN3 and trimethyl indium (TMIn) with and without 308-nm photon excitation has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, no InN film was built on the surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0 + or - 0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In(sub 3d) X-ray photoelectrons) were formed at temperatures of 300 to 700 K. The He(II) UP spectra taken from these InN films agree well with the result of a pseudo-potential calculation for the InN valence band. Our XPS measurements indicate a 3-D island growth of InN on Si(100) at 700 K, which is confirmed by the SEM images. Although the SEM images taken from the same samples with 2,000 X magnification showed very smooth InN films, InN islands of about 100 nm in diameter could be clearly observed with a magnification of or = 20, 000 X. In contrast, the InN film grown at 300 K showed valleys of uncovered substrate instead of InN islands. These uncovered substrate areas, corresponding to about 5% of the surface exposed to the probing X-ray radiation, probably result from incomplete decomposition of In-C bonds and poor diffusion kinetics at this temperature. Above 800 K, dissociation and desorption of In- and N- containing species occurred and thus no InN film was formed on the surface.


Descriptors :   *VAPOR DEPOSITION , *LASERS , *NITRIDES , *INDIUM , *CHEMICAL REACTIONS , *SILICON , DIAMETERS , MEASUREMENT , RATIOS , TEMPERATURE , THICKNESS , SURFACES , KINETICS , DIFFUSION , PHOTONS , PRESSURE , IMAGES , VALENCE BANDS , SPECTRA , ELECTRONS , CHEMICAL BONDS , PHOTON BEAMS , PHOTOELECTRONS , MAGNIFICATION , ISLANDS , EXCIMERS , DESORPTION , DISSOCIATION , IRRADIATION , X RAYS , CARBON , SEMICONDUCTORS , METHYL RADICALS , EXCITATION , FILMS , LOW PRESSURE


Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Electrical and Electronic Equipment
      Coatings, Colorants and Finishes


Distribution Statement : APPROVED FOR PUBLIC RELEASE