Accession Number : ADA264264


Title :   Raman and X-Ray Scattering from Defense Semiconductor-Dielectric Nanocomposites


Corporate Author : HOWARD UNIV WASHINGTON DC LASER CHEMISTRY DIV


Personal Author(s) : Yang, W H ; Huber, T E ; Lubin, J A ; Walrafen, G E ; Huber, C A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264264.pdf


Report Date : Mar 1993


Pagination or Media Count : 7


Abstract : Raman scattering measurements have been performed on semiconductor- insulator nanocomposites in which the semiconducting phase occupies a significant (30%) volume fraction. The composites have been synthesized by high pressure injection of the conducting melt into the nanochannels of commercially available insulating matrices. The optical phonon spectra of GaSb- and Te-SiO, composites exhibit shifts, broadenings, and asymmetries when compared to those of the semiconducting bulk. These are interpreted in terms of strains and phonon confinement in the microcrystalline semiconducting phase. X-ray diffraction measurements allow us to correlate the effects of crystallite size and strains on the optical modes of the composites.


Descriptors :   *COMPOSITE MATERIALS , *DIELECTRICS , *SEMICONDUCTORS , REPRINTS , INJECTION , MEASUREMENT , INSULATION , HIGH PRESSURE , SOLIDS , TELLURIUM , PHONONS , X RAY SCATTERING , PRESSURE , SHIFTING , ASYMMETRY , SPECTRA , PHASE , X RAYS , GALLIUM ANTIMONIDES , RAMAN SPECTRA , CRYSTALS , STRAIN(MECHANICS) , MELTS , X RAY DIFFRACTION , OPTICS , VOLUME , SILICON DIOXIDE


Subject Categories : Electrical and Electronic Equipment
      Laminates and Composite Materials
      Crystallography
      Atomic and Molecular Physics and Spectroscopy


Distribution Statement : APPROVED FOR PUBLIC RELEASE