Accession Number : ADA264157


Title :   Test Structure to Microcircuit Correlation


Descriptive Note : Final rept. Mar 90-Jun 92,


Corporate Author : MISSION RESEARCH CORP ALBUQUERQUE NM


Personal Author(s) : Enlow, Edward W


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264157.pdf


Report Date : Apr 1993


Pagination or Media Count : 38


Abstract : This Parametric Analysis of Radiation effects software development is given the general title PARA. This report describes the development of algorithms and source codes for the simulation of radiation effects on CMOS ICs. The project concentrated on the simulation of total dose effects and the ways to establish/predict the operational lifetime and radiation tolerance of ICs. The PARA switch level simulator incorporates the capability to assign bias dependent postirradiation drive parameters to transistors within a microcircuit and to calculate propagation delays based on those parameters. This permits test vectors to be assigned based on worst case postirradiation propagation delays... . Radiation effects software, IC Radiation operating performance prediction, IC Failure mode identification, Switch-level simulation algorithms.


Descriptors :   *INTEGRATED CIRCUITS , *MICROCIRCUITS , *RADIATION HARDENING , *RADIATION EFFECTS , TEST AND EVALUATION , COMPUTER PROGRAMS , ALGORITHMS , COMPUTERIZED SIMULATION , ELECTRONICS , IONIZING RADIATION , TRANSISTORS , RADIATION TOLERANCE , MOSFET SEMICONDUCTORS , SWITCHES , RADIATION DOSAGE , BIAS , METAL OXIDE SEMICONDUCTORS , RADIATION , PARAMETRIC ANALYSIS , PREDICTIONS , FAILURE


Subject Categories : Electrical and Electronic Equipment
      Electromagnetic Shielding


Distribution Statement : APPROVED FOR PUBLIC RELEASE