Accession Number : ADA264048


Title :   Improved Field Emitter Current Densities and Stability through the Application of a Proprietary Process


Descriptive Note : Quarterly rept. no. 2, Jun-Aug 92.


Corporate Author : VARIAN ASSOCIATES INC PALO ALTO CA


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a264048.pdf


Report Date : Aug 1992


Pagination or Media Count : 4


Abstract : This brief report highlights the technical progress made during the three-month period covered on the contract. The contract goals are to demonstrate a three-terminal vacuum microelectronic device having a current gain cutoff frequency f sub t of at least one GHz at a current density of at least 5 A/sq cm, stable over a period of 2 hours or more. The previous report described the advantages of the single-crystal approach being employed for the contract. Linear current densities of 0.8 mA/mm were reported, within a factor of 3 needed to theoretically satisfy the performance goals of the contract (Task 1 of the SOW). Furthermore, these current densities were realized in conventional 10 to the 9th power Torr vacuum levels without a UHV bake out as is necessary for non crystalline structures. The current emission would remain stable over a period in excess of several days. During this period the focus was on improving the linear current density to the value needed to achieve f sub t = or 1 GHz. To better communicate the impact of the work done during the period, the results are presented first, followed by the experimental work behind these results.


Descriptors :   *CURRENT DENSITY , *FIELD EMISSION , *MICROELECTRONICS , HIGH FREQUENCY , GALLIUM ARSENIDES , EMITTERS , SURFACE PROPERTIES , ETCHING , ALUMINUM GALLIUM ARSENIDES


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE