Accession Number : ADA263907
Title : In-Situ Pre-Oxidation Thermal Cleaning of Silicon in Nitric-Oxide/Hydrochloric Acid Gas Mixture.
Descriptive Note : Technical rept.,
Corporate Author : PENNSYLVANIA STATE UNIV UNIVERSITY PARK APPLIED RESEARCH LAB
Personal Author(s) : Ridley, R. S.
Report Date : APR 1993
Pagination or Media Count : 76
Abstract : The purpose of this investigation was to study thermal cleaning of silicon surfaces in Nitric-Oxide/Hydrochloric acid (NO/HCI) gas mixture, and to integrate this cleaning mode as an in situ cleanup applied prior to conventional thermal growth of gate oxide. Results obtained indicate feasibility of this approach. The electrical characteristics of MOS capacitors formed on NO/HCI cleaned surfaces did not display significant differences from devices processed in the traditional manner. The results obtained from Bias Temperature Stress test and TXRF surface analysis confirm the NO/HCI cleaning method's ability to remove metallic impurities from the water surface. They also show its effectiveness at neutralizing mobile ions.
Descriptors : *CLEANING, *SURFACE ANALYSIS, CAPACITORS, HYDROCHLORIC ACID, IMPURITIES, IONS, MIXTURES, OXIDES, SILICON, TEMPERATURE, NITROGEN OXIDES, OXIDATION, GATES(CIRCUITS), CONTAMINANTS.
Subject Categories : PHYSICAL CHEMISTRY
Distribution Statement : APPROVED FOR PUBLIC RELEASE