Accession Number : ADA263700


Title :   Quantum Devices Using Si-Based Superlattices and Structures


Descriptive Note : Final technical rept. 15 Sep 1989-14 Oct 1992


Corporate Author : CALIFORNIA UNIV LOS ANGELES DEPT OF ELECTRICAL ENGINEERING


Personal Author(s) : Wang, Kang L ; Karunasiri, Gamani


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a263700.pdf


Report Date : 04 Feb 1993


Pagination or Media Count : 25


Abstract : The purpose of the research was to perform scientific study and experimentation on potential new Si-based devices for future optical and electronic applications. The research areas included novel detectors, sources, new properties, and other quantum devices using Si molecular beam epitaxy (Si- MBE) based superlattices and superstructures. With the current ARO support, we have made significant advances in the understanding of optical properties of intersubband transition of SiGe/Si multiple quantum wells, and the fabrication of multiple quantum well infrared detectors operating in the mid infrared range. Large many-body effects have been observed in heavily doped Si and SiGe/Si quantum well structures. Normal incidence intersubband transitions have been demonstrated for both n and p type SiGe/Si quantum well structures. For potential realization of Si-based light sources we have studied the luminescence from monolayer superlattices and strained alloy layers. In the area of quantum transport, a resonant tunneling transistor has been demonstrated.... Intersubband, Quantum Transport, Many-body Effects, Superlattices, Infrared Detectors.


Descriptors :   *QUANTUM WELLS , *SILICON , *STRUCTURES , *SUPERLATTICES , ABSORPTION , ALLOYS , DETECTORS , ELECTRONICS , EPITAXIAL GROWTH , FABRICATION , GERMANIUM , INFRARED DETECTORS , LAYERS , LIGHT SOURCES , LUMINESCENCE , MOLECULAR BEAMS , OPTICAL PROPERTIES , SUPERSTRUCTURES , TRANSISTORS , TRANSITIONS , TRANSPORT


Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Optics
      Quantum Theory and Relativity


Distribution Statement : APPROVED FOR PUBLIC RELEASE