Accession Number : ADA263607
Title : Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on 4-6 December 1991. Low Temperature (LT) GaAs and Related Materials. Volume 241.
Descriptive Note : Final rept. 15 Sep 1991-14 Sep 1992
Corporate Author : MATERIALS RESEARCH SOCIETY PITTSBURGH PA
Personal Author(s) : Witt, Gerald L ; Calawa, Robert ; Mishra, Umesh ; Weber, Eicke
Report Date : 14 Sep 1992
Pagination or Media Count : 300
Abstract : The response to this symposium, less than two years later, accurately reflects the increasing awareness of the rich combination of fundamental materials science and electronic optoelectronic applications that are at play in the subject. The gradual and incomplete understanding of the basic mechanisms responsible for the remarkable properties of these materials have produced a confusion of names. At the time of planning for this symposium the organizers attempted to select a suitable name, one reflecting the understanding to date. However, events would have it otherwise. The then common phrase low temperature of LT GaAs was adopted reluctantly. In doing so, it was realized that this phrase is misleading and inaccurate. More appropriate are two other phrases used in these proceedings. GaAs with arsenic precipitates or GaAs:As and low temperature grown or LTG GaAs. This issue of terminology remains to be resolved.
Descriptors : *GALLIUM ARSENIDES , *SEMICONDUCTORS , ELECTRONICS , OPTICS , LOW TEMPERATURE , SYMPOSIA , FIELD EFFECT TRANSISTORS , SILICON , INDIUM PHOSPHIDES , ELECTRON PARAMAGNETIC RESONANCE , ARSENIC , PHOTODIODES , WAFERS , MOLECULAR BEAMS , CRYSTALS , EPITAXIAL GROWTH , SPECTROSCOPY , COMPOSITE MATERIALS , QUANTUM WELLS
Subject Categories : Electrical and Electronic Equipment
Electrooptical and Optoelectronic Devices
Laminates and Composite Materials
Distribution Statement : APPROVED FOR PUBLIC RELEASE