Accession Number : ADA263418


Title :   Wide Band-Gap Semiconductors. 1991 Materials Research Society Symposium Proceedings


Descriptive Note : Final rept. 15 Sep 1991-14 Sep 1992


Corporate Author : MATERIALS RESEARCH SOCIETY PITTSBURGH PA


Personal Author(s) : Ballance, John


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a263418.pdf


Report Date : Sep 1992


Pagination or Media Count : 771


Abstract : Topics include: Theoretical studies of diamond surface chemistry and diamond-metal interfaces; Growth technique for large area mosaic diamond films; Chemical vapor deposition of diamond films using water:alcohol:organic-acid solutions; Remote ECR plasma deposition of diamond thin films from water- methanol mixtures; Deposition of flame grown diamond films in a controlled atmosphere; Sequential growth of high quality diamond films from hydrocarbon and hydrogen gases; Diamond growth from sputtered atomic carbon and hydrogen gas; The CVD diamond nucleation mechanism on Si overlaid with sp2 carbon; and investigation into the use of a diffusion barrier in microwave plasma assisted chemical vapor deposition of diamond on iron based substrates; Selective nucleation of diamond crystals on the apex of silicon pyramids; and Effect of laser irradiation on carbon-implanted copper substrates.


Descriptors :   *DIAMONDS , *SEMICONDUCTORS , SYMPOSIA , COMPOSITE MATERIALS , CARBON , NITRIDES , OXIDES , SURFACE CHEMISTRY , TANTALUM , ZINC SELENIDES , GROWTH SUBSTANCES , BORON NITRIDES , SILICON CARBIDES , ATOMIC PROPERTIES , CATHODOLUMINESCENCE , HALIDES , ELECTRONS , ALLOYS , NUCLEATION , CRYSTALS , THIN FILMS


Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Laminates and Composite Materials
      Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE